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| 2SK3339-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] VGS IAR *2 EAV *1 PD Tch Tstg Rating 500 27 108 30 27 914 400 +150 -55 to +150 Unit V A A V A mJ W C < *2 Tch=150C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=2.30mH, Vcc=50V Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total gate charge Gate-Source charge Gete-Drain charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=500V VGS=0V VGS=30V VDS=0V ID=13.5A VGS=10V ID=13.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=27A VGS=10V RGS=10 Vcc=250V ID=27A VGS=10V L=2.30mH Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C Min. 500 2.5 Tch=25C Tch=125C Typ. Max. Units V V A mA nA S pF 11 3.0 3.5 10 500 0.2 1.0 10 100 0.16 0.2 22 4300 6450 630 945 285 430 40 60 145 220 315 475 150 225 198 300 38 60 81 125 1.2 660 15.0 1.8 ns nC 27 A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.3125 50.0 Units C/W C/W 1 2SK3339-01 Characteristics Allowable Power Dissipation PD=f(Tc) 500 FUJI POWER MOSFET Safe operating area ID=f(VDS):Single Pulse,Tc=25C 400 10 2 t= 1s 10s 300 D.C. 10 1 100s PD [W] ID [A] 1ms 10ms 0 200 10 100 100ms t D= T t T 0 0 25 50 75 100 125 150 10 -1 10 0 10 1 10 2 10 3 Tc [C] VDS [V] Typical Output Characteristics ID=f(VDS):80s pulse test,Tch=25C 60 20V 15V 50 10V 6.5V 6.0V 100 Typical Transfer Characteristic ID=f(VGS):80s pulse test,VDS=25V,Tch=25C 40 10 ID [A] 30 20 5.0V ID[A] 1 0.1 14 16 0 5.5V 10 4.5V VGS=4.0V 0 0 2 4 6 8 10 12 1 2 3 4 5 6 7 8 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80s pulse test,VDS=25V,Tch=25C 100 0.6 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s pulse test,Tch=25C 0.5 VGS=4.5V 5.0V 10 0.4 5.5V RDS(on) [ ] gfs [S] 0.3 6.0V 6.5V 0.2 10V 15V 20V 1 0.1 0.1 0.1 0.0 1 10 100 0 10 20 30 40 50 60 ID [A] ID [A] 2 2SK3339-01 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=13.5A,VGS=10V 0.8 5.0 4.5 4.0 0.6 3.5 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA 0.7 max. VGS(th) [V] 0.5 RDS(on) [ ] 3.0 2.5 2.0 typ. 0.4 0.3 min. max. typ. 1.5 0.2 1.0 0.1 0.5 0.0 -50 -25 0 25 50 75 100 125 150 0.0 -50 -25 0 25 50 75 100 125 150 Tch [C] Tch [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=27A,Tch=25C 25 10 -7 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 20 10 -8 Vcc= 100V 15 250V 400V Ciss VGS [V] C [F] 10 -9 Coss Crss 10 -10 10 5 0 0 50 100 150 200 250 300 350 10 -11 10 -2 10 -1 10 0 10 1 10 2 Qg [C] VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s pulse test,Tch=25C 100 10 4 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 10 10 3 td(off) IF [A] t [ns] tf 1 10 2 tr td(on) 0.1 0.00 10 0.25 0.50 0.75 1.00 1.25 1.50 1 10 -1 10 0 10 1 10 2 VSD [V] ID [A] 3 2SK3339-01 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)<=27A 1000 10 0 FUJI POWER MOSFET Transient Thermal impedance Zth(ch-c)=f(t) parameter:D=t/T 0.5 800 10 0.2 0.1 0.05 0.02 -2 -1 EAV [mJ] 600 Zth(ch-c) [K/W] 10 0.01 0 t D= T t T 400 200 10 -5 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t [s] 0 0 25 50 75 100 125 150 starting Tch [C] 4 |
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